OLED with sporadic flattening layer between two barrier layers

ABSTRACT

According to one embodiment, an organic semiconductor device includes a supporting substrate, a plurality of organic EL light emitting elements, a first barrier layer, a flattening layer, and a second barrier layer. The flattening layer exists sporadically and makes gentle in inclination steep elevation change present in the surface of the first barrier layer. The first barrier layer and the second barrier layer are made of moisture penetration preventive material.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2013-024910, filed Feb. 12, 2013, theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to an organicsemiconductor device and a method of manufacturing the same.

BACKGROUND

Organic electroluminescent display devices (organic EL display devices),each equipped with organic electroluminescent light emitting elements(organic EL light emitting elements), have been recently developed. Theorganic EL display devices are wide in viewing angle and require nobacklighting, which allows making the display devices thin and light.Furthermore, the organic EL display devices feature lowness in powerconsumption and highness in response speed.

An organic EL display device has as its display elements organicelectroluminescent elements (organic EL elements), each including aportion of an organic layer or an organic layer constituent, which isabove a supporting substrate of glass, etc., and is held between ananode and a cathode. The organic layer includes a hole-injection layer,a hole-transport layer, an emitting layer, an electron-transport layer,an electron-injection layer, etc.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a drawing schematically indicating an exemplary structure ofan organic semiconductor device of an embodiment;

FIG. 2 is a cross-sectional view illustrating an exemplary structure ofany pixel in the organic semiconductor device illustrated in FIG. 1;

FIG. 3 is a flowchart explaining an exemplary method of manufacturingthe organic semiconductor devices belonging to the embodiment;

FIG. 4 is a drawing illustrating an exemplary cross-section of theregion surrounding the active area of the organic semiconductor device;and

FIG. 5 is a drawing illustrating another exemplary cross-section of theregion surrounding the active area of the organic semiconductor device.

DETAILED DESCRIPTION

In general, according to one embodiment, there is provided an organicsemiconductor device comprising: a supporting substrate; a plurality ofpixels including a plurality of organic EL light emitting elementsexistent above the supporting substrate; a first barrier layer includinga surface, extending over the plurality of pixels and covering theplurality of organic EL light emitting elements; a flattening layersporadically existent on the first barrier layer and making gentle ininclination steep elevation change present in the surface of the firstbarrier layer; and a second barrier layer extending over the pluralityof pixels and covering the first barrier layer and the flattening layer.The first barrier layer and the second barrier layer are made ofmoisture penetration preventive material.

According to another embodiment, there is provided a method ofmanufacturing an organic semiconductor device, comprising: forming aplurality of anodes and a plurality of organic layers including anemitting layer respectively, any one of the anodes and a correspondingone of the organic layers constituting a corresponding one of aplurality of pixels; forming a cathode covering the organic layer andextending over the pixels; forming out of moisture penetrationpreventive material a first barrier layer having a surface, covering thecathode and extending over the pixels; forming a flattening layersporadically existent on the first barrier layer to make gentle ininclination any steep elevation change present in the surface of thefirst barrier layer; and forming out of moisture penetration preventivematerial a second barrier layer extending over the pixels and coveringthe first barrier layer and the flattening layer. The flattening layeris formed by vaporously spraying on the supporting substrate in a vacuumenvironment a solvent having been obtained by mixing a polymeric resinand a polymerization initiator so as to form bodies of the sprayedsolvent sporadically existent on the supporting substrate, applyingultraviolet light to the bodies to cause the bodies to be cured and toform a sporadically existent polymeric resin layer, and removing thinfilm portions of the sporadically existent polymeric resin layer byetching.

Now, an organic semiconductor device and a method of manufacturing theorganic semiconductor device of an embodiment will be hereinafterdescribed with reference to the accompanying drawings.

FIG. 1 is a drawing schematically indicating an exemplary structure ofan organic semiconductor device of the embodiment.

As shown in FIG. 1, the organic semiconductor device of the embodimenthas an active area ACT, in which matrically arranged pixels PX areincluded, an array substrate AR, a counter-substrate CT, a driver DRV,and a flexible substrate FRC. It may be possible that the active areaACT translates into a display area for making an image display.

The array substrate AR and the counter-substrate CT are arrangedopposite to each other and are fixed together by a sealing member SLarranged to surround the active area ACT.

The array substrate AR has the driver DRV for driving the pixels PX atits area outward extending from one end of the counter-substrate CT. Thedriver DRV operates in accordance with control signals and image signalsinputted from outside through the flexible substrate FRC connected withone end of the outward extended area of the array substrate AR andoutputs the control signals and the image signals to a non-illustratedsource line, a non-illustrated gate line, etc.

FIG. 2 is a cross-sectional view illustrating an exemplary structure ofany pixel in the organic semiconductor device illustrated in FIG. 1.

As shown in FIG. 2, the array substrate AR has a supporting substrate10, a switching element 11, a storage capacitor C, an anode 12, anorganic layer 13, a cathode 14, a first barrier layer L1, a flatteninglayer L2, and a second barrier layer L3.

The supporting substrate 10 is a transparent insulating glass substrate,for instance, and has on or above its surface the switching element 11,the storage capacitor C, the anode 12, the organic layer 13, the cathode14, etc., all of which will be explained later.

The switching element 11 has a thin film transistor made of conductivelayers and insulating layer all formed at the supporting substrate 10.Namely, switching element is formed simultaneously with various lines,such as the non-illustrated source line, the non-illustrated gate line,etc.

Any storage capacitor C is made of the conductive layers and theinsulating layer all formed at the supporting substrate 10. In anycapacitor, the storage capacitor couples with pixel capacitance formedbetween the anode 12 and the cathode 14.

A passivation film LP is formed to cover the switching element 11 andthe storage capacitor C. The formation of the passivation film LP overthe switching element 11 and the storage capacitor C provides electricalinsulation between adjacent conductive bodies of the switching element11 and the storage capacitor C, and between the switching element 11 andthe anode 12. The passivation film LP has at every pixel PX a contacthole (not illustrated) allowing the switching element 11 and the anode12, both at a pixel in question, to be electrically connected with eachother. The passivation film LP is formed out of materials havingelectric non-conductance, such as SiO₂, SiN, acryl, polyimide, etc., forinstance, and flattens any steep elevation change present on the surfacebecause of the existence of the switching element 11 and the storagecapacitor C.

The anode 12 is arranged on the passivation film LP at each pixel PX.The anode 12 is so constructed as to reflect light emitted from theorganic layer 13 toward the cathode 14. For example, the anode 12 has areflecting layer arranged on the passivation film LP and a transparentelectrode arranged on the reflecting layer.

Each pixel PX may have its own reflecting layer for its own anode 12, orall the pixels PX may share one reflecting layer for their respectiveanodes 12. It is desirable that the reflecting layer should be as highas possible in optical reflectance. For instance, a metal film made ofaluminum, silver (Ag), etc., may be used for a reflecting layer.

In the anode 12, the transparent electrode is electrically connected tothe switching element 11 through a contact hole (not illustrated)provided in the passivation film LP for the anode in question. In theanode 12, a drive current is supplied from the drive circuit DRV throughthe switching element 11 to the transparent electrode.

In the anode 12, the transparent electrode comprises materials havingtransparency and conductivity. For instance, ITO (Indium Tin Oxide) orIZO (Indium Zinc Oxide) may be used as the materials having transparencyand conductivity for making a transparent electrode for an anode 12.

A rib layer LIB is arranged between any adjacent anodes 12. The riblayer LIB prevents a corresponding one of the anodes 12 from coming incontact with the adjacent surrounding anodes and leakage current fromoccurring between the corresponding one of the anodes 12 and the cathode14. The rib layer LIB is formed along the boundary of the pixels PX andsurrounds the anodes 12. The rib layer LIB is about 2000 nm in height.The rib layer LIB is made of materials having electric non-conductance.For instance, the rib layer LIB is made of photosensitive resinmaterials.

The organic layer 13 is arranged on the anodes 12. The organic layer 13has a function of emitting light. It does not matter if the light is ofa white color or any other colors. It also does not matter if theorganic layer 13 comprises organic layer constituents formed on therespective pixels PX or it entirely covers the region of the active areaACT where the pixels PX are arranged.

The organic layer 13 comprises from the side where anode 12 is located ahole-injection layer, which is not illustrated, a hole-transport layer,an emitting layer, an electron-transport layer, and anelectron-injection layer, all of the layers being placed one uponanother. It should be noted that the laminated structure of the organiclayer 13 is not limited to what has been mentioned above but anylaminated structure may be used as long as at least an emitting layer isincluded.

The emitting layer may be formed of any organic electroluminescent (EL)material that may emit light due to the fact that holes and electronsbond together when a drive current is supplied through an anode 12, forinstance. Generally, any organic emitting material may be used as theorganic electroluminescent material. More specifically, it is possibleto use a widely known low weight molecular fluorescent material capableof emitting light in a singlet state, such as a coumarin-based, aperylene-based, a pyran-based, an anthrone-based, a porphyrin-based, aquinacridone-based, an N,N′-dialkyl substitution quinacridone-based, anaphthalimide-based, an N,N′-diaryl substitution pyrrolopyrrole-based,or a widely known low weight molecular phosphorescent material capableof emitting light in a triplet state of a rare-earth metalcomplex-based.

The cathode 14 is arranged on the organic layer 13. The cathode 14 isshared among the pixels PX. Namely, the cathode 14 extends over thepixels PX. For instance, the cathode 14 is formed to cover the entireregion of the active area ACT where the pixels are arranged.

The cathode 14 is made of transparent electrode material. Morespecifically, the cathode 14 may be made of material having transparencyand conductivity, such as ITO or IZO, for instance.

An organic EL light emitting element functioning as a light emittingsource comprises one of the anodes 12, the organic layer 13, and thecathode 14. As apparent from the above, organic EL light emittingelements are located above the supporting substrate 10 and are formed atthe respective pixels PX.

As explained above, a foundation layer is provided on the supportingsubstrate 10. The foundation layer comprises some members that are abovethe supporting substrate 10 and below the first barrier layer L1. Thefoundation layer includes organic EL light emitting elements, etc. Thefoundation layer is used as the foundation for the first barrier layerL1.

The first barrier layer L1 extends over the pixels PX and covers theorganic EL light emitting elements. The first barrier layer L1 isprovided on the cathode 14. The first barrier layer L1 is made ofmoisture penetration preventive material. The first barrier layer L1 isa protective transparent insulator film that prevents oxygen andmoisture from entering the organic layer 13 and the rest layers. Thefirst barrier layer L1 may be made of silicon nitride (SiN), and isformed to entirely cover the active area ACT.

The flattening layer L2 is provided on the first barrier layer L1. Theflattening layer L2 comprises organic layer constituents that arelocated only at stepped portions produced by the structure of the lowerlayers, and makes gentle in inclination all the steep elevation changespresent in the surface of the first barrier layer. Namely, the provisionof the flattening layer L2 makes gentle all the steep elevation changesscattered in the surface where the second barrier layer L3 is formed,and thus makes it possible to prevent the second barrier layer L3 fromcracking. Organic matter may be preferable as material for theflattening layer L2. Specifically, polymeric resin such as acrylic resinmay be used. It should be noted that preferable material for theflattening layer L2 is not limited to acrylic resin alone.

The rib layer forming the ribs LIB is higher than any other layers.Therefore, step difference will occur at a boundary between the rib LIBand the anodes 12. The first barrier layer L1 therefore will have sharpslopes, each inclining substantially at a right angle at a boundarybetween the rib LIB and the anodes 12. The flattening layer L2 is formedby causing liquefied polymer to sporadically coagulate at steppedportions produced by the sharp slopes, owing to the surface tension ofthe liquefied polymer, and then to be cured with ultraviolet light.

When a foreign matter LX is accidentally introduced and forms a bump onthe first barrier layer L1, the formation of the flattening layer L2causes liquefied polymer to coagulate around the foreign matter LX owingto the surface tension of the liquefied polymer and makes gentle ininclination the steep elevation changes around the foreign matter LX.

It is desirable that the flattening layer L2 should ease the steepelevation changes and be sporadically formed. When the flattening layerL2 is formed to spread without any spaces, thinly spread portions shouldbe removed by etching from the flattening layer L2 to make theflattening layer L2 to sporadically spread.

The second barrier layer L3 extends over the pixels PX, and is providedon the first barrier layer L1 and the flattening layer L2. The secondbarrier layer L3 is made of moisture penetration preventive material.The second barrier layer L3 prevents oxygen and moisture from enteringthe first barrier layer L1 and the flattening layer L2, or any of thelayers that are below the second barrier layer L3 and are at the side ofthe supporting substrate 10. The second barrier layer L3 may be made ofsilicon nitride (SiN), for instance, and is formed to entirely cover theupper surface of the sporadically extending flattening layer L2 andthose surfaces of the first barrier layer L1 that are exposed from thesporadically extending flattening layer L2. The flattening layer L2makes gentle in inclination any steep elevation change on the surface ofthe first barrier layer L1, so that it is possible to prevent the secondbarrier layer L3 from cracking when the second barrier layer L3 is laidon the flattening layer L2. It is desirable that any slope of theflattening layer L2 sporadically extending on the first barrier layer L1should meet the surface of the substrate at an angle that is equal to orlower than a predetermined angle, so that the second barrier layer L3should not crack.

As having been explained above, organic EL light emitting elements areall covered with a first barrier layer L1 of about 400 nm, a flatteninglayer L2 of a predetermined thickness, and a second barrier layer L3 ofabout 400 nm. The layers are successively placed one upon another in thementioned order from the lowest layer to form a multi layered structurecomprising two barrier layers and one flattening layer. Therefore, evenif there are areas that are insufficiently covered with the firstbarrier layer due to the presence of accidentally introduced foreignmatters, the flattening layer L2 placed on the first barrier layer L1surely covers the foreign matters and makes gentle any steep elevationchanges sporadically present in the first barrier layer L1. As a result,an almost flat surface will be obtained, which makes it possible to formthe second barrier layer L3 over the almost flat surface of thepolymeric resin layer. Therefore, moisture penetration will be surelyprevented. It should be noted that, when the above-mentioned threelayered structure is regarded as a smallest unit, the adoption of alayered structure having at least two such units will produce similareffect.

The first barrier layer L1 and the second barrier layer L3 may be formedof moisture penetration preventive material, such as silicon nitride,silicon oxide, or silicon oxynitride.

The flattening layer L2 may be formed of macromolecular organic materialcured by polymerization reaction, such as acrylic resin, epoxy resin,polyimide resin, etc.

The second barrier layer L3 is covered with the counter-substrate CT,and filler 20 is filled between them, for instance. Thecounter-substrate CT includes a transparent insulating substrate 30,which is made of glass, for instance. The counter-substrate CT issmaller than the supporting substrate 10 in perimeter.

Now, one example of a method of manufacturing the organic semiconductordevices in the present embodiment will be explained.

FIG. 3 is a flowchart explaining an exemplary method of manufacturingthe organic semiconductor devices in the present embodiment.

By repeating a deposition and patterning with using conductive materialand insulating material, switching elements 11 comprising thin filmtransistor, storage capacitors C, gate line, data line and pixelelectrodes (anodes 12) (Step ST1). A semiconductor layer of the thinfilm transistor may be made of polysilicon.

Subsequently, the pixel electrodes are subjected to a baking and anevaporated film formation process, which are both common to pixels PX.An organic layer 13 including emitting layer is formed by vacuumevaporation, which is executed with using a high-definition mask havingopenings only at those locations that correspond to the respectivepixels PX and require that the respective organic layers 13 should beformed for each color (Step ST2). In this way, every pixel PX is made tohave one of the pixel electrodes and one of the organic layers 13.

Afterwards, a cathode 14, which is a common electrode, is formed byvacuum evaporation to cover all of the pixels PX's and all of theportions of the organic layer 13 (Step ST3).

Then, a first barrier layer L1, a flattening layer L2, and a secondbarrier layer L3 are successively formed to entirely cover an activearea ACT in their individual ways for protecting the organic layer 13from moisture (Step ST4). It should be noted that any organicsemiconductor device including organic EL light emitting elements isweak at moisture and that a dark spot tends to occur at an area where anorganic layer is subjected to moisture penetration because the moisturepenetration causes the organic layer to deteriorate in itscharacteristics, resulting in failure in light emission. A barrier layerfor insulating the organic EL light emitting element from moisture isprovided above the organic EL light emitting element.

A silicon nitride (SiN) film is frequently employed as a barrier layerfor preventing moisture intrusion. The organic EL light emitting elementis weak in heat, due to which it is required to form a barrier layer ata low temperature such as not higher than 100° C. Therefore, it isplasma CVD that is suitable for the formation of a barrier layer whenone wishes to obtain a flat film without having any foreign body.

However, if there should be any pinhole at a barrier film due to thepresence of any foreign body, moisture may externally intrude with thepassage of time, which may result in the progressive failure on themarket. Therefore, a thick barrier film that can sufficiently cover eachand every foreign body is required to sufficiently lower the probabilityof occurrence of defectives. However, it is very difficult to form athick film having a thickness of about 5 μm or 10 μm, for instance, withthe use of a plasma CVD method because of problematic issues ofproductivity and costs.

Furthermore, since a silicon nitride film has light absorption at ashortwave region, a barrier structure having a thick silicon nitridefilm makes it very difficult to allow an effective passage of a blue rayemitted from an organic EL light emitting element. Therefore, there isproposed a multilayered thin film comprising a barrier film having asufficient water preventive function and a covering film coveringforeign bodies with polymeric resin material. However, should aflattening layer which is to be a foreign body covering layer is formedover the entire surface of the substrate, there would be the possibilitythat moisture may infiltrate a substrate through the perimeter of thesubstrate, move on through the flat layer and spread over the whole ofan active area.

To avoid these risks, it is proposed that a flattening layer should besporadically formed at the perimeter of a substrate by using a maskingmethod and that the flattening layer should be wholly covered includingthe sporadically formed perimetrical portion of the flattening layerwith a barrier layer to prevent moisture from spreading over from theperimeter of the substrate. However, the distance from any lightemitting portion of the device to the outside edge of the substrate mustbe as short as possible to meet the requirements of the recent displaydevices. Furthermore, should one wish to obtain much more substratesthan ever from a single mother glass substrate, the mask should be verynarrow in the spaces separating the adjacent substrates in the motherglass substrate. In addition, the production of such masks istechnically very difficult. Moreover, the actual use of the masks willrequire additional costs because the masks must be washed, for instance.

To cope with the above problems, the present embodiment proposes toprevent water from spreading over by sporadically forming the whole ofthe flattening layer in a layered structure comprising barrier layersand a flattening layer. For example, a barrier layer is formed in thefirst place with the use of a plasma CVD method at a substratetemperature of not higher than 100° C., for instance, at a substratetemperature of 60° C.

After that, a solvent which is a mixture of polymeric resin andpolymerization initiator is vaporously sprayed on the supportingsubstrate 10 in the vacuum environment. The polymeric resin is adjustedso as not to form a continuous film by means of the optimization of thesolvent supply conditions (such as supply period of time, substratetemperature, film forming atmosphere, etc.). When spraying the solvent,the supply amount of the solvent is made small and a sporadic film isformed. For example, it is desirable that the solvent is sprayed to forma layer which is not more than ⅕ of a rib layer LIB in height whenforming a flattening layer on the flat region. It should be noted thatthe bodies of the polymer sporadically located on the substrateindividually behave as liquid does, and they gather at foreign bodies orstepped portions and stay there because of their individual surfacetension. In contrast, no body of the polymer resin will adhere to anyflat region where neither stepped portions nor foreign bodies arepresent.

Then, the bodies of the sprayed solvent are individually applied withultraviolet light, which causes the bodies of the polymeric resin to becured as they are, thus to adhere to the foreign bodies or the steppedportions, and to constitute a layer of the polymeric resin. The layer ofthe polymeric resin thus formed is in existence as a sporadic layer, sothat it will never be a distribution channel for external moisture andit will surely cover only the foreign bodies and the stepped portions.It should be noted that, if a thin film of the polymeric resin should beformed on a flat region owing to the solvent spraying condition, itwould be desirable that the thin film should be removed from the layerof the polymeric resin by etching.

A further barrier film will be formed over the sporadic layer of thepolymeric resin with the use of a plasma CVD method at a substratetemperature of not higher than 100° C., for instance, at a substratetemperature of 60° C. This process surely makes it possible to form asealing film which does not impair its moisture preventivecharacteristic even on a substrate which has foreign bodies or steppedportions on its surface.

Then, affixation of the counter-substrate CT is executed with a resinousmaterial used as filler 20 (Step ST5).

The above mentioned way of forming an organic semiconductor device makesit possible to prevent moisture from entering the organic EL lightemitting elements. Therefore, no dark spot will occur and thusdeterioration in quality will be prevented. In addition, any intrusionof moisture will be surely prevented without making thick the barrierlayer covering the organic EL light emitting elements, due to whichdecrease in transmittance of the light emitted from the organic layer 13will never occur. Therefore, the present embodiment makes it possible toprovide highly reliable organic semiconductor devices and a method ofmanufacturing highly reliable organic semiconductor devices.

FIG. 4 is a drawing illustrating an exemplary cross-section of theregion surrounding the active area of one of the above-mentioned organicsemiconductor devices.

It is possible in the present embodiment that the foundation layer ofthe first barrier layer L1 has at its perimeter a concave portion (or aconvex portion) surrounding the active area. In the example that isillustrated in FIG. 4, the concave portion 40 is provided at the riblayer LIB which constitutes the foundation layer of the first barrierlayer L1. As illustrated in FIG. 1, the concave portion 40 is formed inbetween the active area ACT and the sealant SL, and surrounds the activearea ACT. It is desirable that the concave portion should be 10 to 100μm or 20 to 50 μm in line width-to-space width ratio (L/S), forinstance, and it is desirable that the depth of the concave portion 40should be 1 to 10 μm, for instance.

It should be noted that the provision of the concave 40 surrounding theactive area ACT provides steep elevation change at the surface of thefirst barrier layer L1 which covers the concave portion 40. Theflattening layer L2 will be formed on the first barrier layer L1 in sucha manner that the bodies of the polymeric resin gather together only atthe stepped portions of the first barrier layer L1 but will never beformed on any flat portion, so that the flattening layer L2 willsporadically extend over the layer covering the concave region 40. Theflattening layer L2 therefore separates the layer covering the concaveportion 40 into an active area ACT side and an external environmentside, so that moisture will be prevented from entering into andspreading over the active area ACT. In addition, no mask is required toform a sporadic flattening layer, so that it will be possible to reducefacility costs or operating costs and to narrow the frame of any displaydevice.

FIG. 5 is a drawing illustrating an exemplary cross-section of theregion surrounding the active area of the above-mentioned organicsemiconductor device.

The example illustrated in FIG. 5 has a convex portion 50 at the riblayer LIB which constitutes the foundation layer of the first barrierlayer L1. As illustrated in FIG. 1, the convex portion 50 is formed inbetween the active area ACT and the sealant SL, and surrounds the activearea ACT. It is desirable, for instance, that the L/S of the convexportion should be 10 to 100 μm, and that the height of the convexportion 50 should be 1 to 10 μm.

It should be noted that the provision of the convex portion 50surrounding the active area ACT provides steep elevation change at thesurface of the first barrier layer L1 which covers the convex portion50. The flattening layer L2 will be formed on the first barrier layer L1in such a manner that the bodies of the polymeric resin, constituents ofthe flattening layer L2, gather together only at the stepped portions ofthe first barrier layer L1 but will never be located on any flatportion, as explained above, and the first barrier layer L1 is flat atthe region covering the top of the convex portion 50 because the convexportion 50 is flat at its top, as illustrated in FIG. 5, so that theflattening layer L2 will be separated at the flat top of the firstbarrier layer L1 or the flat top of the convex region 50 into an activearea ACT side layer portion and an external environment side layerportion. Therefore, moisture will be surely prevented from entering intoand spreading over the active area ACT. In addition, no mask is requiredto form the sporadic flattening layer, so that it will be possible toreduce facility costs or operating costs and to narrow the frame of anydisplay device.

It should be noted that the example illustrated in FIG. 4 and that inFIG. 5 respectively have only one concave portion 40 and only one convexportion 50, but it may be expected that much more excellent effect willbe obtained if two or more concave portions or two or more convexportions are formed. For example, it may be possible to additionallyform at least one more concave portion 40 or at least one more convexportion 50 at a location surrounding the active area ACT in such amanner that the additionally formed concave portion 40 or convex portion50 faces the sealant SL, or is provided between the active area ACT andthe sealant SL, or is provided on the perimeter which is outside and allaround the sealant SL. The provision of at least one concave portion 40or convex portion 50 that surrounds the active area ACT makes itpossible to sufficiently obtain the above-mentioned sealing effect.

The embodiments having been explained above make it possible to providehighly reliable organic semiconductor devices and a method ofmanufacturing highly reliable organic semiconductor devices.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

Hitherto, an organic EL light emitting element, a component of a displaydevice, has been explained as an embodiment of an organic semiconductordevice, but it is possible that the organic semiconductor device is anorganic transistor or an organic solar cell.

What is claimed is:
 1. A method of manufacturing an organicsemiconductor device, comprising: forming a plurality of anodes and aplurality of organic layers including an emitting layer respectively,any one of the anodes and a corresponding one of the organic layersconstituting a corresponding one of a plurality of pixels; forming acathode covering the organic layer and extending over the pixels;forming out of moisture penetration preventive material a first barrierlayer having a surface, covering the cathode and extending over thepixels; forming a flattening layer sporadically existent on the firstbarrier layer to make gentle in inclination any steep elevation changepresent in the surface of the first barrier layer; and forming out ofmoisture penetration preventive material a second barrier layerextending over the pixels and covering the first barrier layer and theflattening layer, wherein the flattening layer is formed by vaporouslyspraying on the supporting substrate in a vacuum environment a solventhaving been obtained by mixing a polymeric resin and a polymerizationinitiator so as to form bodies of the sprayed solvent sporadicallyexistent on the supporting substrate, applying ultraviolet light to thebodies to cause the bodies to be cured and to form a sporadicallyexistent polymeric resin layer, and removing thin film portions of thesporadically existent polymeric resin layer by etching.
 2. The method ofclaim 1, wherein the first barrier layer includes at least on of siliconnitride, silicon oxide, and silicon oxynitride.
 3. The method of claim1, wherein the second barrier layer includes at least on of siliconnitride, silicon oxide, and silicon oxynitride.
 4. The method of claim1, wherein the flattening layer includes a macromolecular organic filmcured by polymerization reaction.
 5. The method of claim 1, wherein thecathode is formed by evaporation.